Image pickup apparatus

ABSTRACT

An image pickup apparatus comprises plural pixels each including a photoelectric converting element; plural capacitors which receive signals from the plural pixels at first terminals; plural clamping switches for setting a second terminal of each of the plural capacitors into a predetermined electric potential; plural first storing units for storing signals from the second terminals of the plural capacitors; plural second storing units for storing the signals from the second terminals of the plural capacitors; a first common output line to which the signals from the plural first storing units are sequentially output; a second common output line to which the signals from the plural second storing units are sequentially output; and a difference circuit for operating a difference between the signal from the first common output line and the signal from the second common output line.

This application is a division of U.S. application Ser. No. 12/820,114,filed Jun. 21, 2010, which was a division of U.S. application Ser. No.12/610,676, filed Nov. 2, 2009 (now U.S. Pat. No. 7,924,336), which wasa division of U.S. application Ser. No. 11/842,400, filed Aug. 21, 2007(now U.S. Pat. No. 7,633,541), which was a division of U.S. applicationSer. No. 10/808,444, filed Mar. 25, 2004 (now U.S. Pat. No. 7,382,409),the contents of which are incorporated herein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The invention relates to an image pickup apparatus for picking up anobject image.

2. Related Background Art

In recent years, attention has been paid to a solid-state image pickupelement called a CMOS sensor using a CMOS process. The application ofthe CMOS sensor to, particularly, the field of portable informationapparatuses has been progressed because of easy fabricating togetherwith peripheral circuits, low-voltage driving, and the like. At theinitial stage of research of the CMOS sensor, fixed pattern noises,which are generated due to a variation in element characteristics ofeach pixel were a large problem. As one of methods of effectivelyeliminating the fixed pattern noises, the following method using aclamping circuit has been proposed. FIG. 7 shows an equivalent circuitdiagram of the solid-state image pickup element according to the priorart. FIG. 7 shows a portion regarding one certain pixel (it is assumedto be a pixel arranged at the nth row and the mth column here) amongpixels which are two-dimensionally arranged. In FIG. 7, a unit pixelcomprises: a photodiode 1 as a photoelectric converting element; anamplifying MOSFET (Metal Oxide Silicon Field Effect Transistor) 4 foramplifying a signal generated in the photodiode 1; a pixel reset switch3 for resetting an input of the amplifying MOSFET 4 to a predeterminedelectric potential; and a row selecting switch 5 for controllingelectric connection between a source electrode of the amplifying MOSFET4 and a vertical output line 6. When the row selecting switch 5 isturned on, a source follower circuit in which a load MOSFET 7 is used asa load is formed and an electric potential reduced from an electricpotential of the photodiode by an amount corresponding to a thresholdvalue of the amplifying MOSFET 4 appears on the vertical output line 6in accordance with the electric potential of the photodiode 1. Aclamping capacitor 8 and a clamping switch 9 construct a clampingcircuit. The clamping circuit shuts off a DC component of the verticaloutput line potential and transfers only a potential change amount basedon a light charge amount to the post stage. A light response componentobtained via the clamping circuit is temporarily held in a holdingcapacitor 12. Thereafter, it is read out to a horizontal output line 17via a horizontal transfer gate 14 which is controlled by a horizontalscanning circuit 19. The horizontal output line 17 is connected to aninput of an output amplifier 18. The output amplifier 18 drives anexternal load (not shown).

The operation of the solid-state image pickup element will now bedescribed in detail by using driving pulse timing in FIG. 8. It isassumed that prior to the reading operation, a predetermined exposingtime has elapsed and photo-charges have been accumulated in thephotodiode 1. With respect to the nth row selected by a verticalscanning circuit (not shown), a row selecting pulse PSEL is set to thehigh level and a light output according to the light charge amountappears on the vertical output line 6. A subscript “n” added to each ofnotations “PSEL” and “PRES” in FIG. 8 indicates a pulse which is appliedto the pixel of the nth row. Subsequently, a clamping pulse PCOR changesfrom the high level to the low level and the light output is clamped. Atthis time, an electric potential of the holding capacitor 12 has beenreset to a clamping voltage VCOR. Subsequently, the pixel reset pulsePRES is held at the high level for a predetermined period of time andwhen the photodiode 1 is reset, a dark output appears on the verticaloutput line 6. At this time, a change amount from the light output tothe dark output is transferred as a photosignal component to the holdingcapacitor 12 via the clamping capacitor 8. At this time, assuming that acapacitance of the clamping capacitor 8 is CO and a capacitance of theholding capacitor is CT, then a photosignal component is transferredwith a gain of CO/(CO+CT). When a transfer pulse PTS changes from thehigh level to the low level, a circuit between the clamping capacitor 8and the holding capacitor 12 is shut off and a light response componentis held in the holding capacitor 12. Fixed pattern noises, which aregenerated due to a variation in threshold value of the amplifying MOSFET4 of each pixel have been eliminated by the clamping circuit constructedby the clamping capacitor 8 and the clamping switch 9. After that,scanning pulses HSR(1) . . . HSR(m) are generated by the horizontalscanning circuit 19, the horizontal transfer gate 14 is sequentiallyopened/closed, and the photosignal temporarily stored in the holdingcapacitor 12 is read out to the horizontal output line 17 (for example,Japanese Patent Application Laid-Open No. H04-61573).

However, the above-described solid-state image pickup element accordingto the prior art has the following problems. When the clamping switch 9is turned off, since a part of inverting layer charges formed in theclamping switch 9 flows into the holding capacitor 12 side, the electricpotential after the turn-off of the switch 9 drops to a level lower thanthe clamping voltage VCOR. Since a parasitic capacitance exists betweena gate and a source (drain) of the clamping switch 9, the clamping pulsePCOR is mixed into the holding capacitor 12 side via the parasiticcapacitance. If an amount of inverting layer charges and the parasiticcapacitance are different for every clamping switch, a differencebetween offset voltages occurs and the fixed pattern noises aregenerated in the horizontal direction. Generally, there is a tendencythat the farther a distance between two different switches is, thelarger the difference between the offset voltages is, and a phenomenonthat an output level changes gradually in the horizontal directionoccurs. Such a phenomenon results in a luminance fluctuation of adisplay screen. In the case of a color sensor, a spatial deviation of awhite balance is further caused. Since the offset voltage fluctuates atrandom due to an event that the clamping switch is turned off, itbecomes a factor of generation of random noises. By taking intoconsideration of a fact that a transfer gate 10 is ON when the clampingswitch 9 is turned off, an amount of such random noises is expressed by√{square root over ((kT/CO+CT))}where, k: Boltzmann's constant

T: absolute temperature

Particularly, the higher definition an image sensor has, the less thevalues of CO and CT become in association with a decrease in pixelpitch. Therefore, there is a tendency of an increase in random noises.As mentioned above, offset components which are generated in theclamping switch 9 become the fixed pattern noises and random noises todeteriorate picture quality, and become an obstacle to realization ofhigh picture quality by the solid-state image pickup element and itsdriving method of the prior art.

SUMMARY OF THE INVENTION

It is an object of the invention to improve picture quality.

To accomplish the above object, according to an aspect of the presentinvention, an image pickup apparatus of the present invention comprises:a plurality of pixels each including a photoelectric converting element;a plurality of capacitor which receive signals from the plurality ofpixels at first terminals; a plurality of clamping switches for settinga second terminal of each of the plurality of capacitor into apredetermined electric potential; a plurality of first storing means forstoring signals from the second terminals of the plurality of capacitor;a plurality of second storing means for storing the signals from thesecond terminals of the plurality of capacitor; a first common outputline to which the signals from the plurality of first storing means aresequentially output; a second common output line to which the signalsfrom the plurality of second storing means are sequentially output; anddifference means for operating a difference between the signal from thefirst common output line and the signal from the second common outputline.

The above and other objects and features of the present invention willbecome apparent from the following detailed description and the appendedclaims with reference to the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is an equivalent circuit diagram of a solid-state image pickupelement according to the first embodiment of the invention;

FIG. 2 is a timing chart of driving pulses of the solid-state imagepickup element of the first embodiment of the invention;

FIG. 3 is an equivalent circuit diagram of a solid-state image pickupelement according to the second embodiment of the invention;

FIG. 4 is a timing chart of driving pulses of the solid-state imagepickup element of the second embodiment of the invention;

FIG. 5 is an equivalent circuit diagram of a solid-state image pickupelement according to the third embodiment of the invention;

FIG. 6 is a diagram showing an image pickup apparatus according to thefourth embodiment of the invention;

FIG. 7 is an equivalent circuit diagram of a solid-state image pickupelement according to the prior art; and

FIG. 8 is a timing chart of driving pulses of the solid-state imagepickup element of the prior art.

DESCRIPTION OF THE PREFERRED EMBODIMENTS First Embodiment

A solid-state image pickup element according to the first embodiment ofthe invention and its driving method will now be described. FIG. 1 is anequivalent circuit diagram of the solid-state image pickup elementaccording to the first embodiment and shows a portion regarding onecertain pixel (it is assumed to be a pixel arranged at the nth row andthe mth column here) among pixels which are two-dimensionally arranged.In FIG. 1, a unit pixel comprises: the photodiode 1 as a photoelectricconverting element; the amplifying MOSFET 4 as first amplifying meansfor amplifying the signal generated in the photodiode 1; the resetswitch 3 for resetting the input of the amplifying MOSFET 4 to apredetermined voltage; and the row selecting switch 5 for controllingthe electric connection between the source electrode of the amplifyingMOSFET 4 and the vertical output line 6. When the row selecting switch 5is turned on, a source follower circuit in which the load MOSFET 7 isused as a load is formed and an electric potential reduced from anelectric potential of the photodiode by an amount corresponding to thethreshold value of the amplifying MOSFET 4 appears on the verticaloutput line 6 in accordance with the electric potential of thephotodiode 1. The clamping capacitor 8 as a capacitor and the clampingswitch 9 construct together the clamping circuit. The clamping circuitshuts off a DC component of the vertical output line potential andtransfers a potential change amount of the vertical output line to thepost stage. The transfer gate 10 and the holding capacitor 12 serving asfirst storing means and a transfer gate 11 and a holding capacitor 13serving as second storing means are provided symmetrically. The firststoring means holds a signal corresponding to a dark output. The secondstoring means holds a signal corresponding to a light output. A sourcefollower circuit 21 is provided for charging or discharging each of theholding capacitors 12 and 13 in accordance with the electric potentialof the electrode on the output side of the clamping capacitor 8,respectively. The holding capacitors 12 and 13 are connected to ahorizontal output line 16 as a first common output line and thehorizontal output line 17 as a second common output line via horizontaltransfer gates 14 and 15, respectively. A difference between outputs ofthe horizontal output lines 16 and 17 is operated by the outputamplifier 18 as difference means.

The operation of the solid-state image pickup element will now bedescribed in detail by using driving pulse timing in FIG. 2. It isassumed that prior to the reading operation, a predetermined exposingtime has elapsed and photo-charges have been accumulated in thephotodiode 1. With respect to the nth row selected by the verticalscanning circuit (not shown), the row selecting pulse PSEL is set to thehigh level and the light output according to the light charge amountappears on the vertical output line 6. The subscript “n” added to eachof notations “PSEL” and “PRES” in FIG. 2 indicates the pulse which isapplied to the pixel of the nth row. Subsequently, the clamping pulsePCOR changes from the high level to the low level and the light outputis clamped. The output side electrode potential VCOR of the clampingcapacitor 8 corresponding to the light output as a first signal istransferred to the holding capacitor 12 by the source follower circuit21 as second amplifying means and sampled when the transfer pulse PTS isset to the low level. At this time, the offset voltage, which isgenerated when the clamping switch 9 is turned off is held in theholding capacitor 12. Subsequently, the pixel reset pulse PRES is heldat the high level for a predetermined period of time, the photodiode 1is reset, and the dark output appears on the vertical output line 6. Asecond signal corresponding to a potential change from the light outputto the dark output, that is, the signal obtained by subtracting the darkoutput from the light output is sent to the other holding capacitor 13via the clamping capacitor 8 and the source follower circuit 21 andsampled at a moment when the transfer pulse PTN is set to the low level.At this time, the offset voltage, which is generated when the clampingswitch 9 is turned off is multiplexed to the light response componentand held in the holding capacitor 13. By operating a difference betweenthe signals held in the two holding capacitors 12 and 13 by the outputamplifier 18 at the post stage, the offset voltages which are generatedin the clamping switch 9 and the source follower circuit 21 is removedand only the light response component can be obtained. Since the offsetvoltages held in the two holding capacitors 12 and 13 have been sampledin the same low-level period with respect to the clamping pulse PCOR,they are the offset voltages generated in the same event as a resettingoperation by the clamping switch 9. Therefore, the random noisecomponents can be also removed. As described above, according to thesolid-state image pickup element of the first embodiment of theinvention and its driving method, the fixed pattern noises which aregenerated due to a variation in the amplifying MOSFET 4 of the pixel canbe eliminated by the clamping circuits 8 and 9, the fixed pattern noisesand the random noises which are generated in the clamping switch 9 canbe eliminated by the output amplifier, and the image signal of lownoises and high quality can be obtained.

Second Embodiment

A solid-state image pickup element according to the second embodiment ofthe invention and its driving method will be described. FIG. 3 is anequivalent circuit diagram of the solid-state image pickup elementaccording to the second embodiment and shows a portion regarding onecertain pixel (it is assumed to be a pixel arranged at the nth row andthe mth column here) among pixels which are two-dimensionally arranged.In a manner similar to the first embodiment, in FIG. 3, a unit pixelcomprises: the photodiode 1 as a photoelectric converting element; theamplifying MOSFET 4 as first amplifying means for amplifying the signalgenerated in the photodiode 1; the reset switch 3 for resetting theinput of the amplifying MOSFET 4 to a predetermined voltage; and the rowselecting switch 5 for controlling the electric connection between thesource electrode of the amplifying MOSFET 4 and the vertical output line6. Further, a pixel transfer gate 2 for controlling the electricconnection between the photodiode 1 and a gate electrode of theamplifying MOSFET 4 is provided.

The operation of the solid-state image pickup element will now bedescribed in detail by using driving pulse timing in FIG. 4. It isassumed that prior to the reading operation, a predetermined exposingtime has elapsed and photo-charges have been accumulated in thephotodiode 1. With respect to the nth row selected by the verticalscanning circuit (not shown), first, the pixel reset pulse PRES ischanged from the high level to the low level and the resetting of thegate electrode of the amplifying MOSFET 4 is cancelled. At this time, avoltage corresponding to the dark state is held in a parasitic capacitor(hereinafter, referred to as a CFD) of the pixel including the gateelectrode. If the voltage at which the gate voltage is reset lies withina pentode region when the pixel reset switch 3 is ON, it becomes thevoltage dropped from the gate high level of the pixel reset switch 3 byan amount corresponding to the threshold value. If the voltage lieswithin a triode region, although it becomes an SVDD voltage, itdecreases to a value that is slightly lower than those voltages, whenpixel reset switch is turned off. Such a voltage drop is caused by theinflow of inverting layer charges which are formed in the ON state ofthe pixel reset switch or by field through via the parasitic capacitancebetween the gate and source of the pixel reset switch 3. Subsequently,the row selecting pulse PSEL is set to the high level and the darkoutput appears on the vertical output line 6. After the elapse of apredetermined time, the clamping pulse PCOR changes from the high levelto the low level and the dark output is clamped. In a form in which theoffset voltage which is generated when the clamping switch is turned offhas been multiplexed, the output side electrode potential VCOR of theclamping capacitor 8 corresponding to the dark output, which is a secondsignal, is sampled into the holding capacitor 12 at a moment when thetransfer pulse PTN is set to the low level.

Subsequently, in the pixel, the pixel transfer gate 2 is set to the highlevel for a predetermined period of time and the light chargesaccumulated in the photodiode 1 are transferred to the gate electrode ofthe amplifying MOSFET 4. Thus, the gate potential drops from the voltagein the dark state by an amount of Q/CFD when the transferred charges areassumed to be Q. The light output appears on the vertical output line 6in correspondence to such a voltage drop. The second signalcorresponding to potential change from the dark output to the lightoutput, that is, the signal obtained by subtracting the dark output fromthe light output is sent to the holding capacitor 13 via the clampingcapacitor 8 and the source follower circuit 21 and sampled at a momentwhen the PTS is set to the low level as a signal including the offsetvoltage which is generated when the clamping switch is turned off. In amanner similar to the first embodiment, the light response component isobtained by operating the difference between the signals held in theholding capacitors 12 and 13. At this time, not only the offset voltagewhich is generated in the clamping switch 9 but also the offset voltagewhich is generated in the pixel reset switch 3 is removed by thedifference operation. The two signals which are subjected to thedifference operation are sampled in the same low-level period of theclamping pulse PCOR and the pixel reset pulse PRES and the resettingoperations of the clamping switch 9 and the pixel reset switch 3 are thesame event. Therefore, the random noise components are also eliminated.Thus, according to the solid-state image pickup element of the secondembodiment of the invention and its driving method, the fixed patternnoises which are generated due to a variation in the amplifying MOSFET 4of the pixel can be eliminated by the clamping circuits 8 and 9, thefixed pattern noises and the random noises which are generated in thepixel reset switch 3 and the clamping switch 9 can be simultaneouslyeliminated by the output amplifier 18, and the image signal of lownoises and high quality can be obtained.

Third Embodiment

A solid-state image pickup element according to the third embodiment ofthe invention and its driving method will be described. FIG. 5 is anequivalent circuit diagram of the solid-state image pickup elementaccording to the third embodiment and shows a portion regarding onecertain pixel (it is assumed to be a pixel arranged at the nth row andthe mth column here) among pixels which are two-dimensionally arranged.The equivalent circuit is similar to that of FIG. 3 except for that again amplifier 20 is provided in place of the source follower circuit 21in the solid-state image pickup element according to the secondembodiment of FIG. 3. Generally, the output amplifier 18 needs to be anamplifier of a wide band in order to trace the horizontal transferoperation according to the horizontal scanning circuit 19. When theincident light is weak, it is necessary to amplify a voltage of thelight response signal at some place in order to output the sufficientlight response signal to the outside. However, if a high voltageamplification factor is set by the output amplifier 18 of the wide band,noise characteristics deteriorate remarkably. It is, therefore,desirable to amplify the voltage in the processing step of reading outthe pixel to the holding capacitors 12 and 13 in which no problem occurseven in a narrow band.

Particularly, when the apparatus is used in a digital still camera orthe like, it is preferable to switch the voltage amplification factor ofthe gain amplifier 20 in association with a set ISO sensitivity.Consequently, in the high ISO sensitivity setting which presumes anobject of weak incident light, the noise characteristics can beremarkably improved. Ordinarily, since the ISO sensitivity is often setas a ratio of the power of 2 such as 100, 200, 400, . . . , or the like,it is further desirable to set the voltage amplification factor so as toinclude those ratios. One of technological advantages which are obtainedby providing the gain amplifier 20 to a position just after the clampingcircuit, is that the input level of the gain amplifier 20 can be easilyadjusted by the clamping voltage VCOR. Although the offset voltageswhich are generated in the pixel reset switch 3 and the clamping switch9 are amplified by the gain amplifier 20, they can be eliminated byusing the driving pulse timing in FIG. 4 by a method similar to thatdescribed in the second embodiment. The offset voltage which the gainamplifier 20 itself has is also simultaneously eliminated. Further,random noises of a period longer than the sampling interval of each ofthe PTN and the PTS, for example, l/f noises of a long period can bealso eliminated. According to the solid-state image pickup element ofthe third embodiment of the invention, the fixed pattern noises and therandom noises, which are generated in the pixel reset switch 3 and theclamping switch 9 can be also simultaneously eliminated. Further, theoffset voltage of the gain amplifier 20 and the random noises of thelong period can be eliminated. Since the fixed pattern noises and therandom noises which are generated in the pixel reset switch 3 and theclamping switch 9 can be eliminated even after the voltages areamplified by the gain amplifier 20, the effect of reduction of therandom noises due to the voltage amplification executed in the circuitportion of a narrow band can be obtained without causing side effects.Owing to those effects, the image signal of low noises and high qualitycan be obtained.

The first to third embodiments described above further havetechnological effects as will be explained hereinbelow.

A rejection ratio of the noise components in the clamping circuit isbetter than that of the noise components (by one digit) in the system inwhich the light output to the dark output are held in the two holdingcapacitors and the difference between them is operated. It is necessaryto execute the horizontal scan at a high speed.

If the clamping circuit is provided at the final stage, the dark outputand the light output have to be alternately output to the clampingcircuit and it is difficult to execute the horizontal scan at a highspeed. In the first to third embodiments, the clamping circuit isprovided every vertical output line and the noises which are generatedin the clamping circuit are suppressed by the amplifier at the finalstage, so that the solid-state image pickup element in which thesuppression of the noises and the realization of the high reading speedare harmonized can be provided.

The fixed pattern noises and the random noises, which are generated dueto the variation in the amplifying MOSFET 4 of each pixel can be almostcompletely suppressed by the clamping circuit. An absolute amount of thenoises, which are generated in the clamping circuit and an absoluteamount of the source follower can be also reduced by the outputamplifier at the final stage. The noise components which cannot beeliminated almost completely in the solid-state image pickup elementbecome one-dimensional noises which are caused by the clamping circuitand the source follower. A memory which stores one-dimensional data isprovided at the post stage of the image pickup element, one-dimensionalcorrection data is stored into this memory, and the one-dimensionalnoise components are corrected by the one-dimensional correction data.According to the correcting method as mentioned above, it is sufficientto use the memory for storing the one-dimensional data and itcontributes to the decrease in memory and the decrease in load at thepost stage.

An obtaining method of the one-dimensional correction data will now bedescribed.

The following operation is executed when a power source of an imagepickup apparatus (digital camera) in which the image pickup element hasbeen mounted is turned on.

Signals of a part of the pixels (pixels of a few lines) in the imagepickup element are read out via the clamping circuit and the sourcefollower in a state where a mechanical shutter is closed and the lightis shielded. By averaging the read-out signals (averaging the signals ofthe pixels in the vertical direction), the one-dimensional correctiondata is formed and stored into the memory.

Fourth Embodiment

The image pickup apparatus using the solid-state image pickup elementexplained in the first to third embodiments mentioned above will now bedescribed with reference to FIG. 6.

In FIG. 6, reference numeral 101 denotes a barrier serving as a lensprotecting member and a main switch; 102 a lens for forming an opticalimage of an object onto a solid-state image pickup element 104; 103 aniris for varying an amount of light which passed through the lens 102;104 the solid-state image pickup element for fetching the object imageformed by the lens 2 as an image signal; 105 an image pickup signalprocessing circuit including a variable gain amplifying unit foramplifying the image signal which is output from the solid-state imagepickup element 104, a gain correcting circuit unit for correcting a gainvalue, and the like; 106 an A/D converter for converting the analogimage signal output from the solid-state image pickup element 104 into adigital signal; 107 a signal processing unit for making variouscorrection to the image data output from the A/D converter 106 andcompressing the data; 108 a timing generation unit for generatingvarious timing signals to the solid-state image pickup element 104,image pickup signal processing circuit 105, A/D converter 106, andsignal processing unit 107, respectively; 109 a system control andoperation unit for executing various arithmetic operations andcontrolling the whole image pickup apparatus; 110 a memory unit fortemporarily storing the image data; 111 an interface unit (I/F unit) forrecording or reading out the data into/from a recording medium; 112 adetachable recording medium such as a semiconductor memory or the likefor recording or reading out the image data; and 113 an interface unitfor communicating with an external computer or the like.

The signal processing unit 107 has a memory for storing theone-dimensional correction data to correct the noise components whichare generated by the clamping circuits 8 and 9 and the noise componentswhich are generated by the source follower circuit 21 described in thefirst to third embodiments. The signal output from the A/D converter iscorrected on the basis of the correction data stored in the memory.

The signals from a plurality of pixels, which are output via the samevertical output line are corrected by using the same correction data.The one-dimensional correction data is the data including a noisecomponent variation which is caused by the clamping circuits 8 and 9arranged one-dimensionally and a variation which is caused by thedifference between the offset components of the source follower circuit21 arranged one-dimensionally.

As a method of obtaining the one-dimensional data, there is a methodwhereby a vertical OB portion (for example, the pixels of one line areshielded against the light) is provided for the solid-state image pickupelement, the operations as described in the foregoing first to thirdembodiments are executed by using the pixels in the vertical OB portion,and a one-dimensional signal which is obtained from the output amplifier18 is used as correction data.

The operation of the image pickup apparatus upon photographing in theabove construction will now be described.

When the barrier 101 is opened, a main power source is turned on.Subsequently, a power source of a control system is turned on and,further, power sources of photographing system circuits such as an A/Dconverter 106 and the like are turned on.

After that, the system control and operation unit 109 opens the iris 103in order to control an exposure amount and the signal output from thesolid-state image pickup element 104 is converted by the A/D converter106 and, thereafter, input into the signal processing unit 107.

An exposure is calculated by the system control and operation unit 109on the basis of the data in the signal processing unit 107.

Brightness is discriminated on the basis of a result of the photometricprocess. The system control and operation unit 109 controls the iris inaccordance with a discrimination result.

Subsequently, high frequency components are extracted and a distance tothe object is operated by the system control and operation unit 109 onthe basis of the signal output from the solid-state image pickup element104. After that, the lens is actuated and whether an in-focus state isobtained or not is discriminated. If it is determined that the in-focusstate is not obtained, the lens is actuated again and the distancemeasuring process is executed.

After the in-focus state is confirmed, the exposure is started.

After completion of the exposure, the image signal output from thesolid-state image pickup element 104 is A/D converted by the A/Dconverter 106. The converted signal passes the signal processing unit107 and is written into the memory unit by the system control andoperation unit 109.

After that, the data stored in the memory unit 110 passes through therecording medium control I/F unit and is recorded into the detachablerecording medium 112 such as a semiconductor memory or the like by thecontrol of the system control and operation unit 109.

It is also possible that the image data is transmitted through theexternal I/F unit 113 and directly input to a computer or the like wherethe image is modified.

Many widely different embodiments of the present invention may beconstructed without departing from the spirit and scope of the presentinvention. It should be understood that the present invention is notlimited to the specific embodiments described in the specification,except as defined in the appended claims.

What is claimed is:
 1. An image pickup apparatus comprising: a pluralityof pixels arranged in plurality of columns; a plurality of amplifierseach provided for a corresponding one of the columns, each of theamplifiers amplifying a signal output from the pixel in thecorresponding column; an analog to digital conversion unit forconverting a signal derived from the plurality of amplifying units; acorrection unit for correcting the digital signal from the analog todigital conversion unit, wherein the correction unit has a memory forstoring one dimensional correction data, and wherein the correction unitis for correcting the signals derived from the plurality of pixels basedon the one dimensional correction data stored in the memory.
 2. Theapparatus according to claim 1, wherein each of the pixels includes aphotoelectric converting element, a pixel amplifying unit for outputtinga signal from the photoelectric converting element, and a reset unit forresetting an input of the pixel amplifying unit.
 3. The apparatusaccording to claim 2, further comprising: a plurality of holding unitseach provided for a corresponding one of the plurality of amplifiers,wherein the holding unit holds a first signal indicative of an offset ofthe corresponding amplifier and a second signal indicative of a lightresponse component of a corresponding pixel and the offset; and adifferential unit for differential operation between the first andsecond signals.
 4. The apparatus according to claim 3, furthercomprising a plurality of light-shielded pixels provided for acorresponding column of the pixels, wherein the one dimensionalcorrection data is derived from the plurality of light-shielded pixels.5. The apparatus according to claim 1, wherein each of the amplifiers isa variable gain amplifier.